MRF7S38075HR3 MRF7S38075HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IMD, INTERMODULATION DISTORTION (dBc)
?70
?10
1
?40
?50
10
?30
?20
?60
5th Order
3rd Order
200
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
TWO?TONE SPACING (MHz)
1 10010
?60
IM3?U
?20
?30
?50
IM7?U
IMD, INTERMODULATION DISTORTION (dBc)
?40
IM3?L
IM5?U
IM5?L
IM7?L
?25
?50
?55
?60
?45
Figure 9. WiMAX, ACPR, Power Gain and Drain
Efficiency versus Output Power
0
1
Pout, OUTPUT POWER (WATTS) AVG. WiMAX
35
30
10
100
20
ACPR
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
ACPR (dBc)
ηD
25
15
Gps
VDD
= 30 Vdc, I
DQ
=900 mA
f1 = 3495
MHz, f2 = 3505 MHz
Two?Tone Measurements, 10 MHz Tone Spacing
VDD
= 30 Vdc, P
out
= 84 W (PEP), I
DQ
= 900
mA
Two?Tone Measurements
(f1 + f2)/2 = Center Frequency of 3500 MHz
100
8
17
0
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
VDD
= 30 Vdc
IDQ
= 900 mA
f = 3500 MHz
TC
= ?30
C
?30C
10
1
16
15
14
13
12
35
30
25
20
15
η
D
,
DRAIN EFFICIENCY (%)
Gps
ηD
G
ps
, POWER GAIN (dB)
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
G
ps
, POWER GAIN (dB)
40
9
14
0
10
11
IDQ
= 900 mA
f = 3500 MHz
120
VDD
= 28 V
30 V
0
?40
?35
?30
C
40
25
85C
12
13
32 V
5
VDD= 30 Vdc, IDQ
= 900 mA
f = 3500 MHz, 802.16d, 64 QAM 3/4
4 Bursts, 7 MHz Channel
Bandwidth, Input Signal PAR = 9.5 dB
@ 0.01% Probability on CCDF
45
?10
11
10
9
200
10
5
25C
85C
80
100
7th Order
10
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